Planar 4H-and 6H-SiC p-n diodes fabricated by selective diffusion of boron

被引：10

作者：

Gao, Y ^{[1
]}

Soloviev, S ^{[1
]}

Sudarshan, TS ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 12期

关键词：

SiC; selective diffusion; boron; p-n diodes;

D O I：

10.1016/S0038-1101(01)00254-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphite film was used as a protective and selective mask for realizing diffusion of boron in SiC. Secondary ion mass spectroscopy was employed to identify the diffusion profile in SiC. No significant difference between diffusion profiles in 4H-SiC and 6H-SiC was found. Planar p-n diodes with local p-type emitter regions were fabricated in 4H-SiC and 6H-SiC based on this process. The current density versus voltage (J-V) curves of the formed diodes exhibited good rectification characteristics. The 4H-SiC p-n diodes had much lower forward voltage drops and much less temperature dependence in comparison with 6H-SiC p-n diodes. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1987 / 1990

页数：4

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