An approach to the design of PFSCL gates

被引:11
|
作者
Alioto, M [1 ]
Fort, A [1 ]
Pancioni, L [1 ]
Rocchi, S [1 ]
Vignoli, V [1 ]
机构
[1] Univ Siena, Dipartimento Ingn Informaz, I-53100 Siena, Italy
关键词
D O I
10.1109/ISCAS.2005.1465118
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, design strategies for PFSCL logic gates are discussed. Criteria to size transistors' aspect ratios and bias currents are derived as a function of requirements on the noise margin and the power-delay trade-off, which are analytically modeled. The design criteria are also discussed in cases which are of practical interest, i.e. when a high speed or an optimum balance with power dissipation is required. The proposed design strategies are simple enough to be used in pencil-and-paper calculations. The theoretical results are validated through simulations on a 0.18-mu m CMOS process.
引用
收藏
页码:2437 / 2440
页数:4
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