An InP/InGaAs tunnel junction fabricated on (311)B InP substrate by MOCVD

被引：0

作者：

Okuno, YL ^{[1
]}

DenBaars, SP ^{[1
]}

Bowers, JE ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the doping characteristics of InP/InGaAs on the (311)B plane by metalorganic chemical vapour deposition (MOCVD) using metalorganic group-V regents. For both n-type Si-doping and p-type Zn-doping, we found that dopant incorporation is higher on the (311)B plane than the (100) plane, and that we can dope both n-type and p-type layers more than 10(19) cm(-3) at the same growth condition. Applying this result, we grew a tunnel junction on (311)B InP substrates at a constant growth temperature. The as-grown junction showed good current-voltage characteristics and is promising for device applications.

引用

页码：114 / 117

页数：4

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