Temperature-independent lasing wavelength of highly stacked InAs quantum dot laser fabricated on InP(311)B substrate with Bi irradiation

被引：0
|
作者：
Yanase, Satoshi [1 ,2 ]
Akahane, Kouichi [2 ]
Matsumoto, Atsushi [2 ]
Umezawa, Toshimasa [2 ]
Yamamoto, Naokatsu [2 ]
Tominaga, Yoriko [3 ]
Kanno, Atsushi [2 ,4 ]
Maeda, Tomohiro [1 ,2 ]
Sotobayashi, Hideyuki [1 ]
机构：
[1] Aoyama Gakuin Univ, 5-10-1, Fuchinobe,Chou Ku, Sagamihara, Kanagawa 2525258, Japan
[2] Natl Inst Informat & Commun Technol, 4-2-1 Nukui Kitamachi, Koganei, Tokyo 1848795, Japan
[3] Hiroshima Univ, 1-3-1, Kagamiyama, Higashihiroshima, Hiroshima 7398530, Japan
[4] Nagoya Inst Technol, Showa Ku, Nagoya 4668555, Japan
来源：
OPTICS LETTERS | 2023年 / 48卷 / 12期
基金：
日本学术振兴会;
关键词：
BAND-GAP; THRESHOLD; EPITAXY;
D O I：
10.1364/OL.493223
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this study, the effects of bismuth (Bi) irradiation on InAs quantum dot (QD) lasers operating in the telecommunication wavelength band were investigated. Highly stacked InAs QDs were grown on an InP(311)B substrate under Bi irradiation, and a broad-area laser was fabricated. In the lasing operation, the threshold currents were almost the same, regardless of Bi irradiation at room temperature. These QD lasers were operated at temperatures between 20 and 75 degrees C, indicating the possibility of high-temperature operation. In addition, the temperature dependence of the oscillation wavelength changed from 0.531 nm/K to 0.168 nm/K using Bi in the temperature range 20-75 degrees C. (C) 2023 Optica Publishing Group
引用
收藏
页码：3287 / 3290
页数：4
相关论文
共 35 条
  • [1] Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate
    Akahane, Kouichi
    Yamamoto, Naokatsu
    Kawanishi, Tetsuya
    2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, : 73 - 74
  • [2] Nonlinear absorption of highly stacked InAs quantum dot layers on an InP(311) substrate
    Isu, Toshiro
    Inoue, Jun
    Akahane, Kouichi
    Sotobayashi, Hideyuki
    Tsuchiya, Masahiro
    NANOPHOTONICS FOR COMMUNICATION: MATERIALS, DEVICES, AND SYSTEMS III, 2006, 6393
  • [3] Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method
    Akahane, Kouichi
    Yamamoto, Naokatsu
    Kawanishi, Tetsuya
    JOURNAL OF CRYSTAL GROWTH, 2015, 432 : 15 - 18
  • [4] Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
    Saito, H
    Nishi, K
    Sugou, S
    APPLIED PHYSICS LETTERS, 2001, 78 (03) : 267 - 269
  • [5] Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate
    Akahane, Kouichi
    Umezawa, Toshimasa
    Matsumoto, Atsushi
    Yamamoto, Naokatsu
    Kawanishi, Tetsuya
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
  • [6] Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
    Li, S. G.
    Gong, Q.
    Cao, C. F.
    Wang, X. Z.
    Chen, P.
    Yue, L.
    Liu, Q. B.
    Wang, H. L.
    Ma, C. H.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (01) : 86 - 90
  • [7] 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
    Moreau, G.
    Merghem, K.
    Martinez, A.
    Bouchoule, S.
    Ramdane, A.
    ELECTRONICS LETTERS, 2007, 43 (10) : 571 - 572
  • [8] Long-wavelength lasing from InAs self-assembled quantum dots on (311) B InP
    Nishi, K
    Yamada, M
    Anan, T
    Gomyo, A
    Sugou, S
    APPLIED PHYSICS LETTERS, 1998, 73 (04) : 526 - 528
  • [9] Wavelength Tunability of Highly Stacked Quantum Dot Laser Fabricated by a Strain Compensation Technique
    Akahane, Kouichi
    Yamamoto, Naokatsu
    Kawanishi, Tetsuya
    22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2010, : 37 - 38
  • [10] Role of A1 in spacer layer on the formation of stacked InAs quantum dot structures on InP(311)B
    Akahane, K
    Yamamoto, N
    Ohtani, N
    Okada, Y
    Kawabe, M
    JOURNAL OF CRYSTAL GROWTH, 2003, 256 (1-2) : 7 - 11
1234