Temperature-independent lasing wavelength of highly stacked InAs quantum dot laser fabricated on InP(311)B substrate with Bi irradiation

被引：0
|
作者：
Yanase, Satoshi [1 ,2 ]
Akahane, Kouichi [2 ]
Matsumoto, Atsushi [2 ]
Umezawa, Toshimasa [2 ]
Yamamoto, Naokatsu [2 ]
Tominaga, Yoriko [3 ]
Kanno, Atsushi [2 ,4 ]
Maeda, Tomohiro [1 ,2 ]
Sotobayashi, Hideyuki [1 ]
机构：
[1] Aoyama Gakuin Univ, 5-10-1, Fuchinobe,Chou Ku, Sagamihara, Kanagawa 2525258, Japan
[2] Natl Inst Informat & Commun Technol, 4-2-1 Nukui Kitamachi, Koganei, Tokyo 1848795, Japan
[3] Hiroshima Univ, 1-3-1, Kagamiyama, Higashihiroshima, Hiroshima 7398530, Japan
[4] Nagoya Inst Technol, Showa Ku, Nagoya 4668555, Japan
来源：
OPTICS LETTERS | 2023年 / 48卷 / 12期
基金：
日本学术振兴会;
关键词：
BAND-GAP; THRESHOLD; EPITAXY;
D O I：
10.1364/OL.493223
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this study, the effects of bismuth (Bi) irradiation on InAs quantum dot (QD) lasers operating in the telecommunication wavelength band were investigated. Highly stacked InAs QDs were grown on an InP(311)B substrate under Bi irradiation, and a broad-area laser was fabricated. In the lasing operation, the threshold currents were almost the same, regardless of Bi irradiation at room temperature. These QD lasers were operated at temperatures between 20 and 75 degrees C, indicating the possibility of high-temperature operation. In addition, the temperature dependence of the oscillation wavelength changed from 0.531 nm/K to 0.168 nm/K using Bi in the temperature range 20-75 degrees C. (C) 2023 Optica Publishing Group
引用
收藏
页码：3287 / 3290
页数：4
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