Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate

被引：127
|
作者：
Akahane, K
Ohtani, N
Okada, Y
Kawabe, M
机构：
[1] CRL, Commun Res Lab, Koganei, Tokyo 1848795, Japan
[2] Univ Tsukuba, Inst Phys Appl, Tsukuba, Ibaraki 3058573, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 245卷 / 1-2期
关键词：
nanostructures; molecular beam epitaxy; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)01701-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have fabricated stacked InAs quantum dots (QDs) on InP(3 1 1)B substrates. An ultra-high density of QDs was obtained by a method of compensation of strain by controlling the lattice constant of spacer layers without destruction of QDs size uniformity and ordering structure which is characteristic of QDs formation on (3 1 l)B surface. A strong 1.58 mum photoluminescence was observed in this sample at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：31 / 36
页数：6
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