The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

被引：0
|
作者：
Akahane, Kouichi [1 ]
Yamamoto, Naokatsu [1 ]
Kawanishi, Tetsuya [1 ]
机构：
[1] Natl Inst Informat & Commun Technol NICT, Koganei, Tokyo 1848795, Japan
来源：
2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2012年
关键词：
quantum dot; semiconductor laser; strain-compensation; highly stacking; THRESHOLD CURRENT; EFFICIENCY; GAIN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.
引用
收藏
页码：82 / 83
页数：2
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