An InP/InGaAs tunnel junction fabricated on (311)B InP substrate by MOCVD

被引：0
|
作者：
Okuno, YL [1 ]
DenBaars, SP [1 ]
Bowers, JE [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年
关键词：
D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the doping characteristics of InP/InGaAs on the (311)B plane by metalorganic chemical vapour deposition (MOCVD) using metalorganic group-V regents. For both n-type Si-doping and p-type Zn-doping, we found that dopant incorporation is higher on the (311)B plane than the (100) plane, and that we can dope both n-type and p-type layers more than 10(19) cm(-3) at the same growth condition. Applying this result, we grew a tunnel junction on (311)B InP substrates at a constant growth temperature. The as-grown junction showed good current-voltage characteristics and is promising for device applications.
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页码：114 / 117
页数：4
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