Co-implantation of Si and Be in Si GaAs for improved device performance

被引：0

作者：

Dutt, MB ^{[1
]}

Nath, R ^{[1
]}

Kumar, R ^{[1
]}

Sen, MN ^{[1
]}

Kumar, V ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 11期

关键词：

D O I：

10.1016/S0038-1101(98)00121-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of co-implantation of Si and Be in GaAs is discussed in the light of tailoring of a MESFET implantation profile. The modified profile is calculated by considering electrical activation and diffusion of both Si and Be in GaAs. The results compare well with a realized n-layer measured by the C-V technique. Since the pinch-off voltage is a figure of merit of device performance, a calculation of the latter using a tailored implantation profile is also presented in this paper. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1905 / 1910

页数：6

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