Co-implantation of Si and Be in Si GaAs for improved device performance

被引：0
|
作者：
Dutt, MB [1 ]
Nath, R [1 ]
Kumar, R [1 ]
Sen, MN [1 ]
Kumar, V [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 11期
关键词：
D O I：
10.1016/S0038-1101(98)00121-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of co-implantation of Si and Be in GaAs is discussed in the light of tailoring of a MESFET implantation profile. The modified profile is calculated by considering electrical activation and diffusion of both Si and Be in GaAs. The results compare well with a realized n-layer measured by the C-V technique. Since the pinch-off voltage is a figure of merit of device performance, a calculation of the latter using a tailored implantation profile is also presented in this paper. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1905 / 1910
页数：6
相关论文
共 50 条
  • [31] Influence of oxygen co-implantation on germanium out-diffusion and nanoclustering in SiO2/Si films
    Nelis, A.
    Haye, E.
    Terwagne, G.
    THIN SOLID FILMS, 2022, 746
  • [32] Damage formed by Si+ implantation in GaAs
    Hara, Tohru
    Muraki, Takeshi
    Takeda, Satoru
    Uchitomi, Naotaka
    Kitaura, Yoshiaki
    Gao, Guang-bo
    Japanese Journal of Applied Physics, Part 2: Letters, 1994, 33 (10 B):
  • [33] DAMAGE FORMED BY SI+ IMPLANTATION IN GAAS
    HARA, T
    MURAKI, T
    TAKEDA, S
    UCHITOMI, N
    KITAURA, Y
    GAO, GB
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10B): : L1435 - L1437
  • [34] Issues in the ion implantation of Si for GaAs applications
    Varian Ion Implant Systems, 35 Dory Rd., Gloucester, MA 01930, United States
    III-Vs Review, 1997, 10 (02): : 26 - 31
  • [35] DUAL IMPLANTATION OF SI++P+ INTO GAAS
    FAN, WD
    WANG, WY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1086 - 1089
  • [36] Elevated temperature implantation of GaAs with Si ions
    Brown, RA
    Williams, JS
    MICROSTRUCTURE EVOLUTION DURING IRRADIATION, 1997, 439 : 191 - 196
  • [37] FOCUSED SI ION-IMPLANTATION IN GAAS
    BAMBA, Y
    MIYAUCHI, E
    ARIMOTO, H
    KURAMOTO, K
    TAKAMORI, A
    HASHIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L650 - L652
  • [38] DUAL ION-IMPLANTATION OF AS AND SI IN GAAS
    LEE, CH
    CHEN, YW
    LIN, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C327 - C327
  • [39] Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling
    Univ of Surrey, Surrey, United Kingdom
    Nucl Instrum Methods Phys Res Sect B, 1-4 (244-248):
  • [40] Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates
    Dymova, NN
    Kunitsyn, AE
    Chaldyshev, VV
    Markov, AV
    SEMICONDUCTORS, 1997, 31 (12) : 1217 - 1220
12345