Co-implantation of Si and Be in Si GaAs for improved device performance

被引：0
|
作者：
Dutt, MB [1 ]
Nath, R [1 ]
Kumar, R [1 ]
Sen, MN [1 ]
Kumar, V [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 11期
关键词：
D O I：
10.1016/S0038-1101(98)00121-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of co-implantation of Si and Be in GaAs is discussed in the light of tailoring of a MESFET implantation profile. The modified profile is calculated by considering electrical activation and diffusion of both Si and Be in GaAs. The results compare well with a realized n-layer measured by the C-V technique. Since the pinch-off voltage is a figure of merit of device performance, a calculation of the latter using a tailored implantation profile is also presented in this paper. (C) 1998 Elsevier Science Ltd. All rights reserved.
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页码：1905 / 1910
页数：6
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