Co-implantation of Si and Be in Si GaAs for improved device performance

被引：0

作者：

Dutt, MB ^{[1
]}

Nath, R ^{[1
]}

Kumar, R ^{[1
]}

Sen, MN ^{[1
]}

Kumar, V ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 11期

关键词：

D O I：

10.1016/S0038-1101(98)00121-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of co-implantation of Si and Be in GaAs is discussed in the light of tailoring of a MESFET implantation profile. The modified profile is calculated by considering electrical activation and diffusion of both Si and Be in GaAs. The results compare well with a realized n-layer measured by the C-V technique. Since the pinch-off voltage is a figure of merit of device performance, a calculation of the latter using a tailored implantation profile is also presented in this paper. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1905 / 1910

页数：6

共 50 条

[21] Acceptor profile control in GaAs using co-implantation of Zn and P
Hutchinson, S
Gwilliam, R
Kelly, MJ
Sealy, BJ
Chew, A
Stephens, J
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4): : 459 - 462
[22] Improved microwave performance on low-resistivity Si substrates by Si+ ion implantation
Chen, PQ
Chan, YJ
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (09) : 1582 - 1585
[23] ENHANCED ELECTRICAL ACTIVATION OF ZN AND BE IMPLANTS IN GAAS BY THE CO-IMPLANTATION OF PHOSPHORUS
TANG, ACT
SEALY, BJ
REZAZADEH, AA
VACUUM, 1989, 39 (11-12) : 1061 - 1064
[24] EPITAXY AND DEVICE APPLICATIONS OF GAAS ON SI
LEE, JW
SHICHIJO, H
TRAN, LT
JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 597 - 604
[25] High energy Si, Zn and Ga ion implantation into GaAs on Si
Tamura, M
Saitoh, T
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1881 - 1885
[26] High energy Si, Zn and Ga ion implantation into GaAs on Si
Optoelectronics Technology Research, Lab, Ibaraki, Japan
Mater Sci Forum, pt 4 (1881-1886):
[27] Si IMPLANTATION IN UNDOPED Si GaAs AND ITS ANNEALING BEHAVIOR.
Xia, Guan-qun
Chen, Zi-yao
Wang, Wei-yuan
Wang, Yong-hong
Ma, Bi-chun
Xi You Jin Shu/Rare Metals, 1987, 6 (02): : 97 - 100
[28] Optoelectronic device performance on reduced threading dislocation density GaAs/Si
Taylor, PJ
Jesser, WA
Benson, JD
Martinka, M
Dinan, JH
Bradshaw, J
Lara-Taysing, M
Leavitt, RP
Simonis, G
Chang, W
Clark, WW
Bertness, KA
JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) : 4365 - 4375
[29] Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H-SiC
Itoh, H
Troffer, T
Peppermuller, C
Pensl, G
APPLIED PHYSICS LETTERS, 1998, 73 (10) : 1427 - 1429
[30] Driving Third-Order Optical Nonlinearities in Photoluminescent Si Nanoparticles by Nitrogen Co-Implantation in a Silica Matrix
Bornacelli, Jhovani
Araiza-Sixtos, Fernando Arturo
Torres-Torres, Carlos
Hernandez-Acosta, Marco Antonio
Oliver, Alicia
Rangel-Rojo, Raul
MATERIALS, 2022, 15 (16)

← 1 2 3 4 5 →