SI-IMPLANTATION INTO GAAS GROWN ON SI

被引：4

作者：

RAO, MV ^{[1
]}

BABU, RS ^{[1
]}

BERRY, AK ^{[1
]}

DIETRICH, HB ^{[1
]}

BOTTKA, N ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 08期

关键词：

annealing; GaAs; implantation;

D O I：

10.1007/BF02651386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

200 keV Si implantations were performed in the dose range of 5 × 1012 - 1 × 1014 cm-2 in GaAs grown on Si. For comparison implants were also performed in GaAs layers grown on GaAs substrates. Implanted layers were annealed by both furnace and halogen lamp rapid thermal anneals. Significantly lower donor activations were observed in GaAs layers grown on Si substrates than in the layers grown on GaAs substrates. Extremely low dopant activations were obtained for Be implants in GaAs grown on Si. Photoluminescence and photoreflectance measurements were also performed on the implanted material. © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：789 / 794

页数：6

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