SI-IMPLANTATION INTO GAAS GROWN ON SI

被引：4

作者：

RAO, MV ^{[1
]}

BABU, RS ^{[1
]}

BERRY, AK ^{[1
]}

DIETRICH, HB ^{[1
]}

BOTTKA, N ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 08期

关键词：

annealing; GaAs; implantation;

D O I：

10.1007/BF02651386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

200 keV Si implantations were performed in the dose range of 5 × 1012 - 1 × 1014 cm-2 in GaAs grown on Si. For comparison implants were also performed in GaAs layers grown on GaAs substrates. Implanted layers were annealed by both furnace and halogen lamp rapid thermal anneals. Significantly lower donor activations were observed in GaAs layers grown on Si substrates than in the layers grown on GaAs substrates. Extremely low dopant activations were obtained for Be implants in GaAs grown on Si. Photoluminescence and photoreflectance measurements were also performed on the implanted material. © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：789 / 794

页数：6

共 50 条

[31] DUAL ION-IMPLANTATION OF AS AND SI IN GAAS
LEE, CH
CHEN, YW
LIN, MS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C327 - C327
[32] INFLUENCE OF DOSE-RATE AND TEMPERATURE ON THE ACCUMULATION OF SI-IMPLANTATION DAMAGE IN INDIUM-PHOSPHIDE
AKANO, UG
MITCHELL, IV
SHEPHERD, FR
APPLIED PHYSICS LETTERS, 1993, 62 (14) : 1670 - 1672
[33] GENERATION OF MISFIT DISLOCATIONS IN GAAS GROWN ON SI
TSAI, HL
MATYI, RJ
APPLIED PHYSICS LETTERS, 1989, 55 (03) : 265 - 267
[34] Photoluminescence study of GaAs grown on (001) Si
Alberts, Vivian
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (11): : 6111 - 6120
[35] DEFECT CHARACTERIZATION OF GAAS ON SI GROWN BY MOCVD
SOGA, T
NOZAKI, S
NOTO, N
NISHIKAWA, H
JIMBO, T
UMENO, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (12): : 2441 - 2445
[36] Epitaxial SiGeSn grown on Si by ion implantation
Ekeruche, Chinenye U.
Davila, Mikayla
Simpson, Peter J.
Kavanagh, Karen L.
Goncharova, Lyudmila V.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2024, 42 (06):
[37] DEEP LEVELS IN GAAS ON SI GROWN BY MOCVD
HOFMANN, DM
AKIYAMA, M
IKOMA, T
INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 227 - 231
[38] OPTICAL-PUMPING OF GAAS GROWN ON SI
FRANDON, J
BACQUET, G
BANDET, J
FABRE, F
TAOUINT, R
FONTAINE, C
MUNOZYAGUE, A
SOLID STATE COMMUNICATIONS, 1990, 73 (07) : 491 - 493
[39] TEMPERATURE EFFECTS ON THE PHOTOLUMINESCENCE OF GAAS GROWN ON SI
CHEN, Y
FREUNDLICH, A
KAMADA, H
NEU, G
APPLIED PHYSICS LETTERS, 1989, 54 (01) : 45 - 47
[40] DEEP LEVELS IN GAAS ON SI GROWN BY MOCVD
HOFMANN, DM
AKIYAMA, M
IKOMA, T
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 227 - 231

← 1 2 3 4 5 →