INFLUENCE OF DOSE-RATE AND TEMPERATURE ON THE ACCUMULATION OF SI-IMPLANTATION DAMAGE IN INDIUM-PHOSPHIDE

The influence of dose rate and temperature on the implantation damage accumulation in InP has been investigated. InP crystals were implanted at 80-323 K with 600 keV Si+ ions at a beam flux of 0.005-1.0 muA cm-2, and to total fluences of between 5 X 10(12) and 2 X 10(14) Si CM-2 . The residual damage following implantation was analysed by the Rutherford backscattering/channeling technique. The results show that at 80 K, the influence of the beam flux on the accumulated displacement damage is small. However, at T greater-than-or-equal-to 295 K the displaced atom density, N(d), exhibits a power law dependence on J:N(d)=alphaJ(n), with the value of n dependent on both the total ion dose and implant temperature. At 295 K and Si doses of 1-4 X 10(13) CM-2, the value of n varies from 0.23 to 0. 15.