Optical properties of wurtzite GaN/AlGaN quantum wells

被引：0
|
作者：
Suzuki, M [1 ]
Uenoyama, T [1 ]
Kamiyama, S [1 ]
机构：
[1] MATSUSHITA ELECT IND CO LTD,SEMICOND RES CTR,MORIGUCHI,OSAKA 570,JAPAN
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optical gain of the wurtzite GaN/AlGaN quantum well lasers are theoretically studied on the basis of the first-principles calculation and the k . p theory. The parameters required in the analysis are derived from the first-principles electronic hand calculations by a full-potential linearized augmented plane wave method. The small spin-orbit splitting energy as well as very heavy hole masses plays an essential role in causing higher threshold current density than conventional zincblende lasers.
引用
收藏
页码：915 / 918
页数：4
相关论文
共 50 条
  • [21] Crystal orientation effects on electronic properties of wurtzite GaN/AlGaN quantum wells with spontaneous and piezoelectric polarization
    Park, Seoung-Hwan, 1600, JJAP, Tokyo, Japan (39):
  • [22] Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells
    Peng, LH
    Hsu, KT
    Shih, CW
    Chuo, CC
    Chyi, JI
    CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, 2001, : 36 - 37
  • [23] Piezoelectric field effect on optical properties of GaN/GaInN/AlGaN quantum wells
    Im, JS
    Kollmer, H
    Gfrörer, O
    Off, J
    Scholz, F
    Hangleiter, A
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G6.20
  • [24] Excitonic optical absorption in wurtzite InGaN/GaN quantum wells
    Wei, Shuyi
    Jia, Yalei
    Xia, Congxin
    SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (01) : 9 - 15
  • [25] Optical properties of GaN wurtzite quantum wires
    Zhang, XW
    Xia, JB
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (11) : 3107 - 3115
  • [26] Spontaneous polarization effects on electronic and optical properties of wurtzite GaN/AlGaN quantum well lasers
    Park, SH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 38 (04) : 420 - 426
  • [27] Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
    Grandjean, N
    Damilano, B
    Dalmasso, S
    Leroux, M
    Laügt, M
    Massies, J
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) : 3714 - 3720
  • [28] Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells
    Friel, I
    Thomidis, C
    Moustakas, TD
    APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3068 - 3070
  • [29] Optical and structural properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
    Grandjean, N
    Massies, J
    Leroux, M
    Laügt, M
    Lefebvre, P
    Gil, B
    Allègre, J
    Bigenwald, P
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [30] Effects of built-in polarization field on the optical properties of AlGaN/GaN quantum wells
    Grandjean, N
    Damilano, B
    Dalmasso, S
    Leroux, M
    Laügt, M
    Massies, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 219 - 225
12345