Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells

被引：0

作者：

Peng, LH ^{[1
]}

Hsu, KT ^{[1
]}

Shih, CW ^{[1
]}

Chuo, CC ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Taiwan Univ, Inst Electroopt Engn, Taipei 106, Taiwan

来源：

CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST | 2001年

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Large spectral red shifting (similar to140 meV) and reduced radiative recombination efficiency are observed on the high excitation luminescence spectra of InGaN/GaN quantum wells capped with a AlGaN top barrier compared with that of a GaN cap layer. These observations are ascribed to the additive internal field effect due to the spontaneous polarization induced volume charge at the AlGaN/InGaN interface.

引用

页码：36 / 37

页数：2

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