Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells

被引：0
|
作者：
Peng, LH [1 ]
Hsu, KT [1 ]
Shih, CW [1 ]
Chuo, CC [1 ]
Chyi, JI [1 ]
机构：
[1] Natl Taiwan Univ, Inst Electroopt Engn, Taipei 106, Taiwan
来源：
CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST | 2001年
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Large spectral red shifting (similar to140 meV) and reduced radiative recombination efficiency are observed on the high excitation luminescence spectra of InGaN/GaN quantum wells capped with a AlGaN top barrier compared with that of a GaN cap layer. These observations are ascribed to the additive internal field effect due to the spontaneous polarization induced volume charge at the AlGaN/InGaN interface.
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页码：36 / 37
页数：2
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