Optical transitions in InGaN/AlGaN single quantum wells

被引：0
|
作者：
机构：
来源：
J Vac Sci Technol B | / 4卷 / 1139期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Optical transitions in InGaN/AlGaN single quantum wells
    Zeng, KC
    Smith, M
    Lin, JY
    Jiang, HX
    Robert, JC
    Piner, EL
    McIntosh, FG
    Zavada, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1139 - 1143
  • [2] Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells
    Chichibu, Shigefusa F., 2000, JJAP, Tokyo, Japan (39):
  • [3] Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells
    Chichibu, SF
    Shikanai, A
    Deguchi, T
    Setoguchi, A
    Nakai, R
    Nakanishi, H
    Wada, K
    DenBaars, SP
    Sota, T
    Nakamura, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4B): : 2417 - 2424
  • [4] Optical transitions and recombination lifetimes in GaN and InGaN epilayers, and InGaN/GaN and GaN/AlGaN multiple quantum wells
    Smith, M
    Lin, JY
    Jiang, HX
    Khan, A
    Chen, Q
    Salvador, A
    Botchkarev, A
    Morkoc, H
    III-V NITRIDES, 1997, 449 : 829 - 834
  • [5] Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells
    Peng, LH
    Hsu, KT
    Shih, CW
    Chuo, CC
    Chyi, JI
    CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, 2001, : 36 - 37
  • [6] MBE growth and optical characterization of InGaN/AlGaN multi-quantum wells
    Singh, R
    Herzog, WD
    Doppalapudi, D
    Unlu, MS
    Goldberg, BB
    Moustakas, TD
    III-V NITRIDES, 1997, 449 : 185 - 190
  • [7] Optical transitions in InGaN/GaN quantum wells: effects of the piezoelectric field
    Zhang, XH
    Liu, W
    Chua, SJ
    JOURNAL OF CRYSTAL GROWTH, 2004, 268 (3-4) : 521 - 526
  • [8] Calculation of electric field and optical transitions in InGaN/GaN quantum wells
    Christmas, Ursula M. E.
    Andreev, A.D.
    Faux, D.A.
    Journal of Applied Physics, 2005, 98 (07):
  • [9] Calculation of electric field and optical transitions in InGaN/GaN quantum wells
    Christmas, UME
    Andreev, AD
    Faux, DA
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
  • [10] Broadening of interband transitions in InGaN quantum wells
    Gladysiewicz, M.
    Kudrawiec, R.
    Misiewicz, J.
    Siekacz, M.
    Cywinski, G.
    Skierbiszewski, C.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2282 - 2284
12345