Optical properties of wurtzite GaN/AlGaN quantum wells

被引：0

作者：

Suzuki, M ^{[1
]}

Uenoyama, T ^{[1
]}

Kamiyama, S ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,SEMICOND RES CTR,MORIGUCHI,OSAKA 570,JAPAN

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical gain of the wurtzite GaN/AlGaN quantum well lasers are theoretically studied on the basis of the first-principles calculation and the k . p theory. The parameters required in the analysis are derived from the first-principles electronic hand calculations by a full-potential linearized augmented plane wave method. The small spin-orbit splitting energy as well as very heavy hole masses plays an essential role in causing higher threshold current density than conventional zincblende lasers.

引用

页码：915 / 918

页数：4

共 50 条

[41] Ammonia-molecular-beam epitaxial growth and optical properties of GaN/AlGaN quantum wells
Tang, H., 1600, American Institute of Physics Inc. (91):
[42] Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells
Rodrigues, SCP
Sipahi, GM
JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) : 347 - 354
[43] Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells
Zeng, KC
Lin, JY
Jiang, HX
Salvador, A
Popovici, G
Tang, H
Kim, W
Morkoc, H
APPLIED PHYSICS LETTERS, 1997, 71 (10) : 1368 - 1370
[44] Electronic and optical properties of a- and m-plane wurtzite InGaN-GaN quantum wells
Park, Seoung-Hwan
Ahn, Doyeol
Chuang, Shun-Lien
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) : 1175 - 1182
[45] Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers
Yeo, YC
Chong, TC
Li, MF
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (11) : 2224 - 2232
[46] Effects of external electric field and Al content on g factor of wurtzite AlGaN/GaN quantum wells
Li Ming
Yao Ning
Feng Zhi-Bo
Han Hong-Pei
Zhao Zheng-Yin
ACTA PHYSICA SINICA, 2018, 67 (05)
[47] NONLINEAR OPTICAL PROPERTIES OF THE WURTZITE InGaN/AlGaN PARABOLIC QUANTUM DOT
Chen, Tairong
Xie, Wenfang
Liang, Shijun
NANO, 2013, 8 (02)
[48] Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Delphan, Anthonin
Makhonin, Maxim N.
Isoniemi, Tommi
Walker, Paul M.
Skolnick, Maurice S.
Krizhanovskii, Dmitry N.
Skryabin, Dmitry V.
Carlin, Jean-Francois
Grandjean, Nicolas
Butte, Raphael
APL PHOTONICS, 2023, 8 (02)
[49] Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells
Park, SH
JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9904 - 9908
[50] Effects of nonlinear elasticity and electromechanical coupling on optical properties of InGaN/GaN and AlGaN/AlN quantum wells
Lepkowski, S. P.
Majewski, J. A.
ACTA PHYSICA POLONICA A, 2006, 110 (02) : 237 - 242

← 1 2 3 4 5 →