Optical properties of wurtzite GaN/AlGaN quantum wells

被引：0

作者：

Suzuki, M ^{[1
]}

Uenoyama, T ^{[1
]}

Kamiyama, S ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,SEMICOND RES CTR,MORIGUCHI,OSAKA 570,JAPAN

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical gain of the wurtzite GaN/AlGaN quantum well lasers are theoretically studied on the basis of the first-principles calculation and the k . p theory. The parameters required in the analysis are derived from the first-principles electronic hand calculations by a full-potential linearized augmented plane wave method. The small spin-orbit splitting energy as well as very heavy hole masses plays an essential role in causing higher threshold current density than conventional zincblende lasers.

引用

页码：915 / 918

页数：4

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