Reliability of Single-Grain Silicon TFTs Fabricated from Spin-Coated Liquid-Silicon

被引：0

作者：

Zhang, Jin ^{[1
]}

Ishihara, Ryoichi ^{[1
]}

Takagishi, Hideyuki ^{[2
]}

Kawajiri, Ryo ^{[2
]}

Shimoda, Tatsuya ^{[2
,3
]}

Beenakker, C. I. M. ^{[1
]}

机构：

[1] Delft Univ Technol, Delft Inst Microsyst & Nanoelect Technol DIMES, Feldmannweg 17, NL-2628 CT Delft, Netherlands

[2] Japan Sci & Technol Agcy, ERATO, SHIMODA Nanoliquid Proc, Ishikawa 9231211, Japan

[3] JAIST, Sch Mat Sci, Ishikawa 9231292, Japan

来源：

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS | 2012年

关键词：

TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Liquid silicon, a solution of hydrogenated polysilane, is attractive for fabrication of high-speed flexible electronics by printing of Si. We have formed location-controlled silicon grains as large as 3.5 mu m by spin-coating of the liquid-Si and excimer laser crystallization with a long pulse duration (250ns). Single-grain silicon TFTs are fabricated on the grains and the carrier mobilities are 423 cm(2)/Vs for electrons and 118 cm(2)/Vs for holes. The hysteresis behavior and the transistor characteristics after gate and drain stresses were studied systematically as well.

引用

页码：309 / 312

页数：4

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