Single-Grain Si TFTs Fabricated on a Precursor from Doctor-Blade Coated Liquid-Si

被引:0
|
作者
Zhang, J. [1 ]
Trifunovic, M. [1 ]
van der Zwan, M. [1 ]
Takagishi, H. [2 ]
Shimoda, T. [2 ,3 ]
Ishihara, R. [1 ,3 ]
机构
[1] Delft Univ Technol, NL-2600 AA Delft, Netherlands
[2] Japan Sci & Technol Agcy, Yokosuka, Kanagawa, Japan
[3] Japan Adv Inst Sci & Technol, Nomi, Ishikawa, Japan
来源
THIN FILM TRANSISTORS 12 (TFT 12) | 2014年 / 64卷 / 10期
关键词
THIN-FILM TRANSISTORS;
D O I
10.1149/06410.0031ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Printing is attractive for manufacturing flexible circuits. This manuscript presents our investigation of single-grain Si TFTs fabricated from printed liquid-Si, on a polyimide substrate with the maximum process temperature of 350 degrees C. The field-effect mobility is 460 cm2/Vs for electrons and 121 cm(2)/Vs for the holes. CMOS inverters were also fabricated. The devices function at the bending diameter of 3 mm. The device performance under the bending stress was discussed.
引用
收藏
页码:31 / 37
页数:7
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