Single-Grain Si TFTs using Spin-Coated Liquid-Silicon

被引：0

作者：

Zhang, Jin ^{[1
]}

Ishihara, Ryoichi ^{[1
]}

Tagagishi, Hideyuki ^{[2
]}

Kawajiri, Ryo ^{[2
]}

Shimoda, Tatsuya ^{[2
,3
]}

Beenakker, C. I. M. ^{[1
]}

机构：

[1] Delft Univ Technol, Delft Inst Microsyst & Nanoelect Technol DIMES, Feldmannweg 17, NL-2628 CT Delft, Netherlands

[2] Japan Sci & Technol Agcy, ERATO, SHIMODA Nano Liquid Proc, Nomi, Ishikawa 9231211, Japan

[3] Japan Adv Indt Sci & Technol JAIST, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

来源：

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年

关键词：

TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Liquid silicon offers us an opportunity of fabricating TFTs using printed silicon, instead of printed organic materials. We have fabricated single-grain Si TFTs on location-controlled Si grains with laser crystallization of a-Si formed from spin-coated liquid Si. Si grains with a maximum grain diameter of 3.5 mu m were positioned at predetermined sites. Mobilities for electrons and holes are 391 cm(2)/Vs and 111 cm(2)/Vs, respectively.

引用

页数：4

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