Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization

被引：7
|
作者：
Ishihara, Ryoichi [1 ]
Rana, Vikas [1 ]
He, Ming [1 ]
Hiroshima, Y. [2 ]
Inoue, S. [2 ]
Metselaar, Wim [1 ]
Beenakker, Kees [1 ]
机构：
[1] Delft Univ Technol, Fac Elect Engn Math & Comp Sci, DIMES, NL-2600 GB Delft, Netherlands
[2] SEIKO EPSON Cooperat, Frontier Device Res Ctr, Nagano 3990293, Japan
来源：
SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 03期
关键词：
A1 : crystal structure; A2 : czochralski method; A2 : growth from melt; B2 : semiconducting silicon;
D O I：
10.1016/j.sse.2007.10.055
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin film transistors (TFTs) were fabricated inside a location-controlled, large Si grains through an advanced excimer-laser crystallization with a low temperature process. The field-effect mobility for electrons of the single-grain Si TFTs was as high as 597 cm(2)/V s. CMOS inverters are fabricated inside the location-controlled grain. Propagation delay per stage of 3.1 us was successfully obtained with a supply voltage of 8 V. (c) 2007 Elsevier Ltd. Ali rights reserved.
引用
收藏
页码：353 / 358
页数：6
相关论文
共 50 条
  • [1] Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser
    Ishihara, Ryoichi
    Zhang, Jin
    Trifunovic, Miki
    van der Zwan, Michiel
    Takagishi, Hideyuki
    Kawajiri, Ryo
    Shimoda, Tatsuya
    Beenakker, C. I. M.
    THIN FILM TRANSISTORS 11 (TFT 11), 2012, 50 (08): : 49 - 53
  • [2] Single-grain TFTs on location-controlled crystal grains formed by excimer laser crystallization of Si thin films
    Kumomi, H
    Shin, C
    Nakagawa, G
    Asano, T
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 773 - 776
  • [3] HIGH-MOBILITY POLY-SI TFTS FABRICATED BY A NOVEL EXCIMER-LASER CRYSTALLIZATION METHOD
    SHIMIZU, K
    SUGIURA, O
    MATSUMURA, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2664 - 2665
  • [4] Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate
    Zhang, Jin
    van der Zwan, Michiel
    Ishihara, Ryoichi
    JOURNAL OF DISPLAY TECHNOLOGY, 2014, 10 (11): : 945 - 949
  • [5] Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs
    Kumomi, H
    Wakiyama, H
    Nakagawa, G
    Makihira, K
    Asano, T
    AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 : 277 - 282
  • [6] Defect states in excimer-laser crystallized single-grain TFTs studied with isothermal charge deep-level transient spectroscopy
    Nadazdy, V.
    Rana, V.
    Ishihara, R.
    Lanyi, S.
    Durny, R.
    Metselaar, J. W.
    Beenakker, C. T. M.
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2006, 2007, 910 : 461 - 466
  • [7] Enlargement of grain size and location control of grain in excimer-laser crystallization of Si film
    Yeh, Wenchang
    Ke, Dunyuan
    Zhuang, Chunjun
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2006, 2007, 910 : 323 - 328
  • [8] Single-grain Si TFTs and circuits for flexible electronics and 3D-ICs
    Ishihara, Ryoichi
    Rana, Vikas
    He, Ming
    Metselaar, Wim
    Beenakker, Kees
    Hiroshima, Yasushi
    Abe, Daisuke
    Inoue, Satoshi
    2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II, 2007, 38 : 252 - +
  • [9] Advanced excimer-laser crystallization techniques of Si thin-film for location control of large grain on glass
    Ishihara, R
    van der Wilt, PC
    van Dijk, BD
    Burtsev, A
    Voogt, FC
    Bertens, GJ
    Metselaar, JW
    Beenakker, CIM
    FLAT PANEL DISPLAY TECHNOLOGY AND DISPLAY METROLOGY II, 2001, 4295 : 14 - 23
  • [10] Single-Grain Si TFTs Fabricated on a Precursor from Doctor-Blade Coated Liquid-Si
    Zhang, J.
    Trifunovic, M.
    van der Zwan, M.
    Takagishi, H.
    Shimoda, T.
    Ishihara, R.
    THIN FILM TRANSISTORS 12 (TFT 12), 2014, 64 (10): : 31 - 37
12345