Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization

被引：7
|
作者：
Ishihara, Ryoichi [1 ]
Rana, Vikas [1 ]
He, Ming [1 ]
Hiroshima, Y. [2 ]
Inoue, S. [2 ]
Metselaar, Wim [1 ]
Beenakker, Kees [1 ]
机构：
[1] Delft Univ Technol, Fac Elect Engn Math & Comp Sci, DIMES, NL-2600 GB Delft, Netherlands
[2] SEIKO EPSON Cooperat, Frontier Device Res Ctr, Nagano 3990293, Japan
来源：
SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 03期
关键词：
A1 : crystal structure; A2 : czochralski method; A2 : growth from melt; B2 : semiconducting silicon;
D O I：
10.1016/j.sse.2007.10.055
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin film transistors (TFTs) were fabricated inside a location-controlled, large Si grains through an advanced excimer-laser crystallization with a low temperature process. The field-effect mobility for electrons of the single-grain Si TFTs was as high as 597 cm(2)/V s. CMOS inverters are fabricated inside the location-controlled grain. Propagation delay per stage of 3.1 us was successfully obtained with a supply voltage of 8 V. (c) 2007 Elsevier Ltd. Ali rights reserved.
引用
收藏
页码：353 / 358
页数：6
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