Reliability of Single-Grain Silicon TFTs Fabricated from Spin-Coated Liquid-Silicon

被引:0
|
作者
Zhang, Jin [1 ]
Ishihara, Ryoichi [1 ]
Takagishi, Hideyuki [2 ]
Kawajiri, Ryo [2 ]
Shimoda, Tatsuya [2 ,3 ]
Beenakker, C. I. M. [1 ]
机构
[1] Delft Univ Technol, Delft Inst Microsyst & Nanoelect Technol DIMES, Feldmannweg 17, NL-2628 CT Delft, Netherlands
[2] Japan Sci & Technol Agcy, ERATO, SHIMODA Nanoliquid Proc, Ishikawa 9231211, Japan
[3] JAIST, Sch Mat Sci, Ishikawa 9231292, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Liquid silicon, a solution of hydrogenated polysilane, is attractive for fabrication of high-speed flexible electronics by printing of Si. We have formed location-controlled silicon grains as large as 3.5 mu m by spin-coating of the liquid-Si and excimer laser crystallization with a long pulse duration (250ns). Single-grain silicon TFTs are fabricated on the grains and the carrier mobilities are 423 cm(2)/Vs for electrons and 118 cm(2)/Vs for holes. The hysteresis behavior and the transistor characteristics after gate and drain stresses were studied systematically as well.
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页码:309 / 312
页数:4
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