Raman sensitivity to crystal structure in InAs nanowires

被引：23

作者：

Panda, Jaya Kumar ^{[1
]}

Roy, Anushree ^{[1
]}

Singha, Achintya ^{[2
]}

Gemmi, Mauro ^{[3
]}

Ercolani, Daniele ^{[4
,5
]}

Pellegrini, Vittorio ^{[4
,5
]}

Sorba, Lucia ^{[4
,5
]}

机构：

[1] Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, W Bengal, India

[2] Bose Inst, Dept Phys, Kolkata 700009, W Bengal, India

[3] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, I-56127 Pisa, Italy

[4] NEST Ist Nanosci CNR, I-56127 Pisa, Italy

[5] Scuola Normale Super Pisa, I-56127 Pisa, Italy

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期

关键词：

SCATTERING; SEMICONDUCTORS;

D O I：

10.1063/1.3698115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge as a non-invasive method to study polytypism in such nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698115]

引用

页数：3

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