Raman sensitivity to crystal structure in InAs nanowires

被引：23

作者：

Panda, Jaya Kumar ^{[1
]}

Roy, Anushree ^{[1
]}

Singha, Achintya ^{[2
]}

Gemmi, Mauro ^{[3
]}

Ercolani, Daniele ^{[4
,5
]}

Pellegrini, Vittorio ^{[4
,5
]}

Sorba, Lucia ^{[4
,5
]}

机构：

[1] Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, W Bengal, India

[2] Bose Inst, Dept Phys, Kolkata 700009, W Bengal, India

[3] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, I-56127 Pisa, Italy

[4] NEST Ist Nanosci CNR, I-56127 Pisa, Italy

[5] Scuola Normale Super Pisa, I-56127 Pisa, Italy

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期

关键词：

SCATTERING; SEMICONDUCTORS;

D O I：

10.1063/1.3698115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge as a non-invasive method to study polytypism in such nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698115]

引用

页数：3

共 50 条

[41] Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires
Gomez, Victor J.
Marnauza, Mikelis
Dick, Kimberly A.
Lehmann, Sebastian
NANOSCALE ADVANCES, 2022, 4 (16): : 3330 - 3341
[42] Crystal Phase Selective Growth in GaAs/InAs Core-Shell Nanowires
Rieger, Torsten
Schaepers, Thomas
Gruetzmacher, Detlev
Lepsa, Mihail Ion
CRYSTAL GROWTH & DESIGN, 2014, 14 (03) : 1167 - 1174
[43] Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal Quality
Ek, Martin
Borg, B. Mattias
Dey, Anil W.
Ganjipour, Bahram
Thelander, Claes
Wernersson, Lars-Erik
Dick, Kimberly A.
CRYSTAL GROWTH & DESIGN, 2011, 11 (10) : 4588 - 4593
[44] Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy
Pournia, Seyyedesadaf
Linser, Samuel
Jnawali, Giriraj
Jackson, Howard E.
Smith, Leigh M.
Ameruddin, Amira
Caroff, Philippe
Wong-Leung, Jennifer
Tan, Hark Hoe
Jagadish, Chennupati
Joyce, Hannah J.
NANO RESEARCH, 2020, 13 (06) : 1586 - 1591
[45] Structure and quality controlled growth of InAs nanowires through catalyst engineering
Zhang, Zhi
Lu, Zhenyu
Xu, Hongyi
Chen, Pingping
Lu, Wei
Zou, Jin
NANO RESEARCH, 2014, 7 (11) : 1640 - 1649
[46] Structure and quality controlled growth of InAs nanowires through catalyst engineering
Zhi Zhang
Zhenyu Lu
Hongyi Xu
Pingping Chen
Wei Lu
Jin Zou
Nano Research, 2014, 7 : 1640 - 1649
[47] Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy
Seyyedesadaf Pournia
Samuel Linser
Giriraj Jnawali
Howard E. Jackson
Leigh M. Smith
Amira Ameruddin
Philippe Caroff
Jennifer Wong-Leung
Hark Hoe Tan
Chennupati Jagadish
Hannah J. Joyce
Nano Research, 2020, 13 : 1586 - 1591
[48] Electronic structure of Mn-doped InAs nanowires in the magnetic field
Xiong, Wen
SUPERLATTICES AND MICROSTRUCTURES, 2016, 100 : 1159 - 1176
[49] Raman spectroscopy and structure of crystalline gallium phosphide nanowires
Xiong, QH
Gupta, R
Adu, KW
Dickey, EC
Lian, GD
Tham, D
Fischer, JE
Eklund, PC
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2003, 3 (04) : 335 - 339
[50] Probing strain in wurtzite InP-InAs core-shell nanowires with Raman spectroscopy
Zhao, Yongqian
Xue, Mengfei
Goransson, D. J. O.
Borgstrom, M. T.
Xu, H. Q.
Chen, Jianing
PHYSICAL REVIEW B, 2021, 104 (23)

← 1 2 3 4 5 →