Raman sensitivity to crystal structure in InAs nanowires

被引：23

作者：

Panda, Jaya Kumar ^{[1
]}

Roy, Anushree ^{[1
]}

Singha, Achintya ^{[2
]}

Gemmi, Mauro ^{[3
]}

Ercolani, Daniele ^{[4
,5
]}

Pellegrini, Vittorio ^{[4
,5
]}

Sorba, Lucia ^{[4
,5
]}

机构：

[1] Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, W Bengal, India

[2] Bose Inst, Dept Phys, Kolkata 700009, W Bengal, India

[3] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, I-56127 Pisa, Italy

[4] NEST Ist Nanosci CNR, I-56127 Pisa, Italy

[5] Scuola Normale Super Pisa, I-56127 Pisa, Italy

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期

关键词：

SCATTERING; SEMICONDUCTORS;

D O I：

10.1063/1.3698115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge as a non-invasive method to study polytypism in such nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698115]

引用

页数：3

共 50 条

[21] Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
Zervos, M. (zervos@natlab.research.phillips.com), 1600, American Institute of Physics Inc. (95):
[22] Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires
Panda, Jaya Kumar
Roy, Anushree
Singha, Achintya
Gemmi, Mauro
Ercolani, Daniele
Pellegrini, Vittorio
Sorba, Lucia
SOLID STATE COMMUNICATIONS, 2013, 160 : 26 - 31
[23] Effect of polytypism on the long and short range crystal structure of InAs nanostructures: An EXAFS and Raman spectroscopy study
Pal, Suparna
Rajput, Parasmani
Singh, Shreyashkar Dev
Sathe, Vasant G.
Jha, Shambhu Nath
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (04):
[24] Selective GaSb radial growth on crystal phase engineered InAs nanowires
Namazi, Luna
Nilsson, Malin
Lehmann, Sebastian
Thelander, Claes
Dick, Kimberly A.
NANOSCALE, 2015, 7 (23) : 10472 - 10481
[25] Crystal orientation dependence of the spin-orbit coupling in InAs nanowires
Jespersen, T. S.
Krogstrup, P.
Lunde, A. M.
Tanta, R.
Kanne, T.
Johnson, E.
Nygard, J.
PHYSICAL REVIEW B, 2018, 97 (04)
[26] Electronic structure of InAs/GaSb core-shell nanowires
Kishore, V. V. Ravi
Partoens, B.
Peeters, F. M.
PHYSICAL REVIEW B, 2012, 86 (16):
[27] Electronic structure of free-standing InP and InAs nanowires
B. Lassen
M. Willatzen
R. Melnik
L. C. Lew Yan Voon
Journal of Materials Research, 2006, 21 : 2927 - 2935
[28] Electronic structure of free-standing InP and InAs nanowires
Lassen, B.
Willatzen, M.
Melnik, R.
Voon, L. C. Lew Yan
JOURNAL OF MATERIALS RESEARCH, 2006, 21 (11) : 2927 - 2935
[29] Crystallographic structure of InAs nanowires studied by transmission electron microscopy
Tomioka, Katsuhiro
Motohisa, Junichi
Hara, Shinjiroh
Fukui, Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (45-49): : L1102 - L1104
[30] Influence of Si-doping on structure in InAs nanowires.
von der Ahe, Martina
Hardtdegen, H.
Sladek, K.
Penz, A.
Dorn, F.
Heiss, A.
Weirich, T.
Gruetzmacher, D.
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2010, 66 : S300 - S300

← 1 2 3 4 5 →