Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

被引：8

作者：

Tanta, Rawa ^{[1
]}

Lindberg, Caroline ^{[1
]}

Lehmann, Sebastian ^{[2
]}

Bolinsson, Jessica ^{[1
,5
]}

Carro-Temboury, Miguel R. ^{[3
]}

Dick, Kimberly A. ^{[2
,4
]}

Vosch, Tom ^{[3
]}

Jespersen, Thomas Sand ^{[1
]}

Nygard, Jesper ^{[1
]}

机构：

[1] Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices & Nanosci Ctr, Univ Pk 5, DK-2100 Copenhagen, Denmark

[2] Lund Univ, Solid State Phys, S-22100 Lund, Sweden

[3] Univ Copenhagen, Dept Chem, Nanosci Ctr, Univ Pk 5, DK-2100 Copenhagen, Denmark

[4] Lund Univ, Ctr Anal & Synth, Box 124, S-22100 Lund, Sweden

[5] Tetra Pak Solut AB, Ruben Rausings Gata, SE-22186 Lund, Sweden

来源：

PHYSICAL REVIEW B | 2017年 / 96卷 / 16期

基金：

新加坡国家研究基金会; 瑞典研究理事会;

关键词：

III-V NANOWIRES; ZINC-BLENDE; SEMICONDUCTOR NANOWIRE; MAJORANA FERMIONS; SCATTERING; SUPERCONDUCTOR; DEVICES; SIZE; GAP;

D O I：

10.1103/PhysRevB.96.165433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electron microscopy are combined on the same individual nanowires to evaluate the LO mode intensity as a function of the stacking fault density. A clear increase in the LO mode intensity was observed when the stacking fault density was increased. Our results confirm the utility of Raman spectroscopy as a powerful tool for detecting crystal defects in nanowires.

引用

页数：7

共 50 条

[1] Micro-Raman study of GaAs nanowires
Peng, Wang
Jabeen, Fauzia
Harmand, J. C.
Jusserand, B.
PHYSICS OF SEMICONDUCTORS, 2013, 1566 : 492 - +
[2] CHARACTERIZATION OF GAAS HETEROLAYERS BY MICRO-RAMAN SPECTROSCOPY
ICHIMURA, M
MORIGUCHI, Y
USAMI, A
TABUCHI, M
SASAKI, A
JOURNAL OF CRYSTAL GROWTH, 1995, 149 (3-4) : 167 - 174
[3] Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating
Soini, Martin
Zardo, Ilaria
Uccelli, Emanuele
Funk, Stefan
Koblmueller, Gregor
Fontcuberta i Morral, Anna
Abstreiter, Gerhard
APPLIED PHYSICS LETTERS, 2010, 97 (26)
[4] Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy
Begum, N.
Piccin, M.
Jabeen, F.
Bais, G.
Rubini, S.
Martelli, F.
Bhatti, A. S.
JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)
[5] Micro-Raman Spectroscopy for Meat Type Detection
De Biasio, M.
Stampfer, P.
Leitner, R.
Huck, C. W.
Wiedemair, V.
Balthasar, D.
NEXT-GENERATION SPECTROSCOPIC TECHNOLOGIES VIII, 2015, 9482
[6] Micro-Raman spectroscopy of Si nanowires: Influence of diameter and temperature
Torres, A.
Martin-Martin, A.
Martinez, O.
Prieto, A. C.
Hortelano, V.
Jimenez, J.
Rodriguez, A.
Sangrador, J.
Rodriguez, T.
APPLIED PHYSICS LETTERS, 2010, 96 (01)
[7] Structural properties of GaNAs nanowires probed by micro-Raman spectroscopy
Filippov, S.
Ishikawa, F.
Chen, W. M.
Buyanova, I. A.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (02)
[8] MICRO-RAMAN SPECTROSCOPY
LERNER, JM
CHEMICAL & ENGINEERING NEWS, 1990, 68 (49) : 5 - 5
[9] Diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy
Srnanek, R.
Irmer, G.
Zalusky, R.
Dubecky, F.
Kudela, R.
Vincze, A.
Novotny, I.
John, J.
ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 2006, : 55 - 58
[10] Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples
Srnanek, R
Geurts, J
Lentze, M
Irmer, G
Donoval, D
Brdecka, P
Kordos, P
Förster, A
Sciana, B
Radziewicz, D
Tlaczala, M
APPLIED SURFACE SCIENCE, 2004, 230 (1-4) : 379 - 385

← 1 2 3 4 5 →