Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

被引：8

作者：

Tanta, Rawa ^{[1
]}

Lindberg, Caroline ^{[1
]}

Lehmann, Sebastian ^{[2
]}

Bolinsson, Jessica ^{[1
,5
]}

Carro-Temboury, Miguel R. ^{[3
]}

Dick, Kimberly A. ^{[2
,4
]}

Vosch, Tom ^{[3
]}

Jespersen, Thomas Sand ^{[1
]}

Nygard, Jesper ^{[1
]}

机构：

[1] Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices & Nanosci Ctr, Univ Pk 5, DK-2100 Copenhagen, Denmark

[2] Lund Univ, Solid State Phys, S-22100 Lund, Sweden

[3] Univ Copenhagen, Dept Chem, Nanosci Ctr, Univ Pk 5, DK-2100 Copenhagen, Denmark

[4] Lund Univ, Ctr Anal & Synth, Box 124, S-22100 Lund, Sweden

[5] Tetra Pak Solut AB, Ruben Rausings Gata, SE-22186 Lund, Sweden

来源：

PHYSICAL REVIEW B | 2017年 / 96卷 / 16期

基金：

新加坡国家研究基金会; 瑞典研究理事会;

关键词：

III-V NANOWIRES; ZINC-BLENDE; SEMICONDUCTOR NANOWIRE; MAJORANA FERMIONS; SCATTERING; SUPERCONDUCTOR; DEVICES; SIZE; GAP;

D O I：

10.1103/PhysRevB.96.165433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electron microscopy are combined on the same individual nanowires to evaluate the LO mode intensity as a function of the stacking fault density. A clear increase in the LO mode intensity was observed when the stacking fault density was increased. Our results confirm the utility of Raman spectroscopy as a powerful tool for detecting crystal defects in nanowires.

引用

页数：7

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