ESD issues for advanced CMOS technologies

被引：4
|
作者：
Duvvury, C
Amerasekera, A
机构：
[1] Semiconduct. Proc. and Device Center, Texas Instruments Inc., MS 461, Dallas, TX 75265
来源：
MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 7-8期
关键词：
D O I：
10.1016/0026-2714(96)00024-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As technologies advance towards the deep submicron, the ESD protection design issues have been known to become more critical. This paper examines the recent trends in ESD protection designs, the technology impact, and the specific approaches to build-in ESD reliability. It is shown that the efficient performance of advanced protection designs requires an optimised process that can meet the ESD robustness criterion. Copyright (C) 1996 Elsevier Science Ltd.
引用
收藏
页码：907 / 924
页数：18
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