Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node

被引：0
|
作者：
Suthram, S. [1 ]
Sun, Y.
Majhi, P. [3 ]
Ok, I. [2 ,5 ]
Kim, H. [2 ,5 ]
Harris, H. R.
Goel, N.
Parthasarathy, S. [7 ]
Koehler, A. [7 ]
Acosta, T. [7 ]
Nishida, T. [7 ]
Tseng, H. -H.
Tsai, W. [6 ]
Lee, J. [2 ,5 ]
Jammy, R. [4 ]
Thompson, S. E. [7 ]
机构：
[1] Intern Univ Florida, Gainesville, FL 32611 USA
[2] SEMATECH, Austin, TX USA
[3] Intel Assignee, Austin, TX USA
[4] IBM Corp, Armonk, NY USA
[5] Univ Texas Austin, Austin, TX 78712 USA
[6] Intel Corp, Santa Clara, CA USA
[7] Univ Florida, Gainesville, FL USA
来源：
2008 SYMPOSIUM ON VLSI TECHNOLOGY | 2008年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：143 / +
页数：2
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