Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node

被引：0

作者：

Suthram, S. ^{[1
]}

Sun, Y.

Majhi, P. ^{[3
]}

Ok, I. ^{[2
,5
]}

Kim, H. ^{[2
,5
]}

Harris, H. R.

Goel, N.

Parthasarathy, S. ^{[7
]}

Koehler, A. ^{[7
]}

Acosta, T. ^{[7
]}

Nishida, T. ^{[7
]}

Tseng, H. -H.

Tsai, W. ^{[6
]}

Lee, J. ^{[2
,5
]}

Jammy, R. ^{[4
]}

Thompson, S. E. ^{[7
]}

机构：

[1] Intern Univ Florida, Gainesville, FL 32611 USA

[2] SEMATECH, Austin, TX USA

[3] Intel Assignee, Austin, TX USA

[4] IBM Corp, Armonk, NY USA

[5] Univ Texas Austin, Austin, TX 78712 USA

[6] Intel Corp, Santa Clara, CA USA

[7] Univ Florida, Gainesville, FL USA

来源：

2008 SYMPOSIUM ON VLSI TECHNOLOGY | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：143 / +

页数：2

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