Magnetic tunnel junction (MTJ) patterning for magnetic random access memory (MRAM) process applications

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作者：
Nagahara, Kiyokazu [1 ,2 ]
Mukai, Tomonori [1 ,2 ]
Ishiwata, Nobuyuki [2 ]
Hada, Hiromitu [1 ,2 ]
Tahara, Shuichi [1 ,2 ]
机构：
[1] MRAM Spintronics R and D Center, R/D Assoc. for Fut. Electron Devices, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
[2] Silicon System Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2003年 / 42卷 / 5 B期
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