Novel magnetic random access memory cell consisting of magnetic tunnel junction connected in parallel with negative differential resistance device

被引：0
|
作者：
Uemura, Tetsuya [1 ]
Honma, Satoshi [1 ]
Marukame, Takao [1 ]
Yamamoto, Masafumi [1 ]
机构：
[1] Division of Electronics Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2004年 / 43卷 / 4 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2114 / 2117
相关论文
共 50 条
  • [1] Novel magnetic random access memory cell consisting of magnetic tunnel junction connected in parallel with negative differential resistance device
    Uemura, T
    Honma, S
    Marukame, T
    Yamamoto, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2114 - 2117
  • [2] A dielectric tunnel RC device model for magnetic tunnel junction in magnetic random access memory cell
    Li, SC
    Lee, JM
    Shu, MF
    Su, JP
    Wu, TH
    IEEE TRANSACTIONS ON MAGNETICS, 2005, 41 (02) : 899 - 902
  • [3] Negative differential resistance in magnetic tunnel junction systems
    Filatov, Alexander
    Pogorelov, Alexander
    Pogoryelov, Yevgen
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2014, 251 (01): : 172 - 177
  • [4] Perpendicular magnetic tunnel junction and its application in magnetic random access memory
    刘厚方
    Syed Shahbaz Ali
    韩秀峰
    Chinese Physics B, 2014, 23 (07) : 17 - 25
  • [5] Perpendicular magnetic tunnel junction and its application in magnetic random access memory
    Hou-Fang, Liu
    Ali, Syed Shahbaz
    Xiu-Feng, Han
    CHINESE PHYSICS B, 2014, 23 (07)
  • [6] Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
    Nishimura, N
    Hirai, T
    Koganei, A
    Ikeda, T
    Okano, K
    Sekiguchi, Y
    Osada, Y
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) : 5246 - 5249
  • [7] Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
    Nishimura, Naoki
    Hirai, Tadahiko
    Koganei, Akio
    Ikeda, Takashi
    Okano, Kazuhisa
    Sekiguchi, Yoshinobu
    Osada, Yoshiyuki
    1600, American Institute of Physics Inc. (91):
  • [8] Tutorial on magnetic tunnel junction magnetoresistive random-access memory
    Cockburn, BF
    RECORDS OF THE 2004 IEEE INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN AND TESTING, 2004, : 46 - 51
  • [9] Magnetic tunnel junction (MTJ) patterning for magnetic random access memory (MRAM) process applications
    Nagahara, K
    Mukai, T
    Ishiwata, N
    Hada, H
    Tahara, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (5B): : L499 - L501
  • [10] Magnetic tunnel junction (MTJ) patterning for magnetic random access memory (MRAM) process applications
    Nagahara, Kiyokazu
    Mukai, Tomonori
    Ishiwata, Nobuyuki
    Hada, Hiromitu
    Tahara, Shuichi
    Japanese Journal of Applied Physics, Part 2: Letters, 2003, 42 (5 B):
12345