Novel magnetic random access memory cell consisting of magnetic tunnel junction connected in parallel with negative differential resistance device

被引：0
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作者：
Uemura, Tetsuya [1 ]
Honma, Satoshi [1 ]
Marukame, Takao [1 ]
Yamamoto, Masafumi [1 ]
机构：
[1] Division of Electronics Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2004年 / 43卷 / 4 B期
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页码：2114 / 2117
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