Magnetic tunnel junction (MTJ) patterning for magnetic random access memory (MRAM) process applications

被引：0
|
作者：
Nagahara, Kiyokazu [1 ,2 ]
Mukai, Tomonori [1 ,2 ]
Ishiwata, Nobuyuki [2 ]
Hada, Hiromitu [1 ,2 ]
Tahara, Shuichi [1 ,2 ]
机构：
[1] MRAM Spintronics R and D Center, R/D Assoc. for Fut. Electron Devices, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
[2] Silicon System Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2003年 / 42卷 / 5 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
    Nishimura, N
    Hirai, T
    Koganei, A
    Ikeda, T
    Okano, K
    Sekiguchi, Y
    Osada, Y
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) : 5246 - 5249
  • [22] Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory
    Min, Su Ryun
    Cho, Han Na
    Kim, Kee Won
    Cho, Young Jin
    Choa, Sung-Hoon
    Chung, Chee Won
    THIN SOLID FILMS, 2008, 516 (11) : 3507 - 3511
  • [23] Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
    Nishimura, Naoki
    Hirai, Tadahiko
    Koganei, Akio
    Ikeda, Takashi
    Okano, Kazuhisa
    Sekiguchi, Yoshinobu
    Osada, Yoshiyuki
    1600, American Institute of Physics Inc. (91):
  • [24] Double Perovskites Materials Based Magnetic Tunnel Junction Devices for MRAM Applications
    Kumari, Seema
    Yadav, Rekha
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2024, 60 (03) : 435 - 446
  • [25] Process-induced magnetic tunnel junction damage and its recovery for the development of spin-orbit torque magnetic random access memory
    Rahaman, Sk. Ziaur
    Chang, Yao-Jen
    Hsin, Yu-Chen
    Yang, Shan-Yi
    Lee, Hsin-Han
    Wang, I. -Jung
    Chen, Guan-Long
    Su, Yi-Hui
    Wei, Jeng-Hua
    Sheu, Shyh-Shyuan
    Lo, Wei -Chung
    Deng, Duan-Li
    Chang, Shih-Chieh
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2023, 565
  • [26] A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction
    Ikegawa, S. (sumio.ikegawa@toshiba.co.jp), 1600, Japan Society of Applied Physics (42):
  • [27] Experimental demonstration of magnetic tunnel junction-based computational random-access memory
    Yang Lv
    Brandon R. Zink
    Robert P. Bloom
    Hüsrev Cılasun
    Pravin Khanal
    Salonik Resch
    Zamshed Chowdhury
    Ali Habiboglu
    Weigang Wang
    Sachin S. Sapatnekar
    Ulya Karpuzcu
    Jian-Ping Wang
    npj Unconventional Computing, 1 (1):
  • [28] Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays
    Lee, YK
    Chun, BS
    Kim, YK
    Hwang, I
    Park, W
    Kim, T
    Kim, H
    Lee, J
    Jeong, WC
    IEEE TRANSACTIONS ON MAGNETICS, 2005, 41 (02) : 883 - 886
  • [29] A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction
    Ikegawa, S
    Asao, Y
    Saito, Y
    Takahashi, S
    Kai, T
    Tsuchida, K
    Yoda, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (7A): : L745 - L747
  • [30] Switch-free read operation design and measurement of magnetic tunnel junction magnetic random access memory arrays
    Zheng, YK
    Wang, XY
    You, D
    Wu, YH
    APPLIED PHYSICS LETTERS, 2001, 79 (17) : 2788 - 2790
12345