A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction

被引：13
|
作者：
Ikegawa, S
Asao, Y
Saito, Y
Takahashi, S
Kai, T
Tsuchida, K
Yoda, H
机构：
[1] MRAM Spintron R&D Ctr, R&D Assoc Furure Electron Devices, Sagamihara, Kanagawa 2291198, Japan
[2] Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
[3] Toshiba Co Ltd, SoC Res & Dev Ctr, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 7A期
关键词：
MRAM; memory; CMOS; magnetic tunnel junction; tunnel magnetoresistance; double junction;
D O I：
10.1143/JJAP.42.L745
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A 1 kb magnetoresistive random access memory (MRAM) is demonstrated with a 0.4 x 1.2 mum(2) magnetic tunnel junction (MTJ) and 0.18 mum complementary metal-oxide-semiconductor (CMOS) technology. In this study, a double MTJ, which is designed to have a larger signal margin than a conventional MTJ, is used. The uniformity of resistance for a double MTJ is comparable to that of a single MTJ and is expected to be better than a single MTJ if process conditions are optimized. The magnetic design of the MTJ provided a good astroid curve and resulted in 90% of bits working towards a relatively broad range of bit-line voltage and word-line voltage.
引用
收藏
页码：L745 / L747
页数：3
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