INVESTIGATION OF ISOTYPIC n- alpha -SiC-n- beta -SiC HETEROJUNCTIONS.

被引：0
|
作者：
Mirsagatov, Sh.A.
Stafeev, V.I.
Tadzhibaev, M.
机构：
来源：
Soviet physics. Semiconductors | 1980年 / 14卷 / 07期
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中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
An investigation was made of the current-voltage and capacitance-voltage characteristics of isotypic n- alpha -SiC-n- beta -SiC heterojunctions under forward and reverse voltages. These characteristics were recorded in a wide range of temperatures and frequencies. The forward current-voltage characteristics obeyed J varies directly as V and J varies directly as V**3, whereas the reverse characteristics exhibited J varies directly as V and J varies directly as V**2. These characteristics and the distribution of the potential along an oblique section (3 degree ) through a heterojunction demonstrated the existence of a high-resistivity surface layer in beta -SiC. Minima were found in the active and reactive components of the impedance at frequencies of 1-10 kHz. The energy band diagram of the heterojunctions was constructed.
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页码：770 / 773
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