INVESTIGATION OF ISOTYPIC n- alpha -SiC-n- beta -SiC HETEROJUNCTIONS.

An investigation was made of the current-voltage and capacitance-voltage characteristics of isotypic n- alpha -SiC-n- beta -SiC heterojunctions under forward and reverse voltages. These characteristics were recorded in a wide range of temperatures and frequencies. The forward current-voltage characteristics obeyed J varies directly as V and J varies directly as V**3, whereas the reverse characteristics exhibited J varies directly as V and J varies directly as V**2. These characteristics and the distribution of the potential along an oblique section (3 degree ) through a heterojunction demonstrated the existence of a high-resistivity surface layer in beta -SiC. Minima were found in the active and reactive components of the impedance at frequencies of 1-10 kHz. The energy band diagram of the heterojunctions was constructed.