INVESTIGATION OF ISOTYPIC n- alpha -SiC-n- beta -SiC HETEROJUNCTIONS.

被引:0
|
作者
Mirsagatov, Sh.A.
Stafeev, V.I.
Tadzhibaev, M.
机构
来源
Soviet physics. Semiconductors | 1980年 / 14卷 / 07期
关键词
D O I
暂无
中图分类号
TN [电子技术、通信技术];
学科分类号
0809 ;
摘要
An investigation was made of the current-voltage and capacitance-voltage characteristics of isotypic n- alpha -SiC-n- beta -SiC heterojunctions under forward and reverse voltages. These characteristics were recorded in a wide range of temperatures and frequencies. The forward current-voltage characteristics obeyed J varies directly as V and J varies directly as V**3, whereas the reverse characteristics exhibited J varies directly as V and J varies directly as V**2. These characteristics and the distribution of the potential along an oblique section (3 degree ) through a heterojunction demonstrated the existence of a high-resistivity surface layer in beta -SiC. Minima were found in the active and reactive components of the impedance at frequencies of 1-10 kHz. The energy band diagram of the heterojunctions was constructed.
引用
收藏
页码:770 / 773
相关论文
共 50 条
  • [21] Electrical characteristics of 6H-SiC/GaN isotype n-n heterojunctions
    Kuznetsov, NI
    Nikolaev, AE
    Melnik, YV
    Nikitina, IP
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1655 - 1658
  • [22] INVESTIGATION OF NONIDEAL SI-SIC HETEROJUNCTIONS
    KADYROV, MA
    KUNINA, NV
    SAIDOV, AS
    SHAMURATOV, KA
    SHARONOVA, LV
    SHIK, AY
    SHMARTSEV, YV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 942 - 944
  • [23] Quantum wells on 3C-SiC/NH-SiC Heterojunctions. Calculation of Spontaneous Polarization and Electric Field Strength in Experiments
    Sbruev, I. S.
    Sbruev, S. B.
    SEMICONDUCTORS, 2010, 44 (10) : 1313 - 1320
  • [24] Schotky Barrier Height and Calculation of Voltage–Current Characteristics of Al/n-(SiC)1–x(AlN)x Diodes And 4H–SiC Heterojunctions
    V. I. Altukhov
    A. V. Sankin
    V. F. Antonov
    S. V. Filipova
    O. A. Mityugova
    Russian Physics Journal, 2020, 62 : 1663 - 1667
  • [25] Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments
    I. S. Sbruev
    S. B. Sbruev
    Semiconductors, 2010, 44 : 1313 - 1320
  • [26] Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode
    Yu, Hengyu
    Liang, Shiwei
    Liu, Hangzhi
    Wang, Jun
    Shen, Z. John
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (09) : 4571 - 4576
  • [27] MICROSTRUCTURAL INVESTIGATION AND INDENTATION RESPONSE OF PRESSURELESS-SINTERED ALPHA-SIC AND BETA-SIC
    HANNINK, RHJ
    BANDO, Y
    TANAKA, H
    INOMATA, Y
    JOURNAL OF MATERIALS SCIENCE, 1988, 23 (06) : 2093 - 2101
  • [28] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF ISOTYPIC N-INSE-N-CULNSE2 HETEROJUNCTIONS
    KYAZYMZADE, AG
    TAGIROV, VI
    ABDINOV, AS
    MAMEDOV, VK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (02): : 222 - 223
  • [29] Electrical and optical properties of n-ZnO/p-SiC heterojunctions
    Alivov, YI
    Johnstone, D
    Özgür, Ü
    Avrutin, V
    Fan, Q
    Akarca-Biyikli, SS
    Morkoç, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7281 - 7284
  • [30] Electrical and optical properties of n-ZnO/p-SiC heterojunctions
    Alivov, Ya.I.
    Johnstone, D.
    Özgür, U.
    Avrutin, V.
    Fan, Q.
    Akarca-Biyikli, S.S.
    Morkoç, H.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (10): : 7281 - 7284