RADIATION ORDERING EFFECT IN p-Si-n-GaP HETEROJUNCTIONS.

被引：0
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作者：
Borkovskaya, O.Yu. [1 ]
Dmitruk, N.L. [1 ]
Litovchenko, V.G. [1 ]
机构：
[1] Acad of Sciences of the Ukrainian, SSR, Inst of Semiconductors, Kiev,, USSR, Acad of Sciences of the Ukrainian SSR, Inst of Semiconductors, Kiev, USSR
来源：
Soviet physics. Semiconductors | 1984年 / 18卷 / 10期
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摘要：
11
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页码：1131 / 1132
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