共 50 条
- [31] Planar, high voltage, boron implanted 6H-SiC P-N junction diodes SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 717 - 720
- [32] FABRICATION OF P-N JUNCTION DIODES USING HOMOEPITAXIALLY GROWN 6H-SiC AT LOW TEMPERATURE BY CHEMICAL VAPOR DEPOSITION. Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (11): : 1815 - 1817
- [33] Continuous resistance of epitaxial p-n-structures based on 6H-SiC PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (08): : 1 - 7
- [35] 4H-and 6H-SiC vertical static induction transistor with p-n junction as a gate 2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 579 - 582
- [37] Structural properties of 6H-SiC epilayers grown by two different techniques Mater Sci Eng B Solid State Adv Technol, 1-3 (345-348):
- [38] Characterization of Schottky contact on p-type 6H-SiC SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1227 - 1230
- [40] Structural properties of 6H-SiC epilayers grown by two different techniques MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 345 - 348