Study of the contact potential difference in p-n 6H-SiC structures grown by various techniques

被引:0
|
作者
Russian Acad of Science, St. Petersburg, Russia [1 ]
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Planar, high voltage, boron implanted 6H-SiC P-N junction diodes
    Shenoy, PM
    Baliga, BJ
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 717 - 720
  • [32] FABRICATION OF P-N JUNCTION DIODES USING HOMOEPITAXIALLY GROWN 6H-SiC AT LOW TEMPERATURE BY CHEMICAL VAPOR DEPOSITION.
    Shibahara, Kentaro
    Kuroda, Naotaka
    Nishino, Shigehiro
    Matsunami, Hiroyuki
    Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (11): : 1815 - 1817
  • [33] Continuous resistance of epitaxial p-n-structures based on 6H-SiC
    Strelchuk, AM
    Gresserov, BN
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (08): : 1 - 7
  • [34] Planar 4H-and 6H-SiC p-n diodes fabricated by selective diffusion of boron
    Gao, Y
    Soloviev, S
    Sudarshan, TS
    SOLID-STATE ELECTRONICS, 2001, 45 (12) : 1987 - 1990
  • [35] 4H-and 6H-SiC vertical static induction transistor with p-n junction as a gate
    Sankin, VI
    Shkrebiy, PP
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 579 - 582
  • [36] CONTACT RESISTANCE MEASUREMENTS ON P-TYPE 6H-SIC
    CROFTON, J
    BARNES, PA
    WILLIAMS, JR
    EDMOND, JA
    APPLIED PHYSICS LETTERS, 1993, 62 (04) : 384 - 386
  • [37] Structural properties of 6H-SiC epilayers grown by two different techniques
    Sofia Univ, Sofia, Bulgaria
    Mater Sci Eng B Solid State Adv Technol, 1-3 (345-348):
  • [38] Characterization of Schottky contact on p-type 6H-SiC
    Kamimura, K
    Okada, S
    Ito, H
    Nakao, M
    Onuma, Y
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1227 - 1230
  • [39] Characterization of Schottky contact on p-type 6H-SiC
    Kamimura, Kiichi
    Okada, Shinsuke
    Ito, Hitoshi
    Nakao, Masato
    Onuma, Yoshiharu
    Materials Science Forum, 2000, 338
  • [40] Structural properties of 6H-SiC epilayers grown by two different techniques
    KakanakovaGeorgieva, A
    Paskova, T
    Yakimova, R
    Hallin, C
    Syvajarvi, M
    Trifonova, EP
    Surtchev, M
    Janzen, E
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 345 - 348