Structural properties of 6H-SiC epilayers grown by two different techniques

被引:0
|
作者
Sofia Univ, Sofia, Bulgaria [1 ]
机构
来源
关键词
Number:; F-521; Acronym:; -; Sponsor:;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Structural properties of 6H-SiC epilayers grown by two different techniques
    KakanakovaGeorgieva, A
    Paskova, T
    Yakimova, R
    Hallin, C
    Syvajarvi, M
    Trifonova, EP
    Surtchev, M
    Janzen, E
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 345 - 348
  • [2] Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE
    Trampert, A
    Brandt, O
    Yang, B
    Jenichen, B
    Ploog, KH
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 407 - 410
  • [3] Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation
    Savkina, N
    Tregubova, A
    Scheglov, M
    Solov'ev, V
    Volkova, A
    Lebedev, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 317 - 320
  • [4] 6H-SiC epilayers as nuclear particle detectors
    Lebedev, AA
    Savkina, NS
    Ivanov, AM
    Strokan, NB
    Davydov, DV
    SEMICONDUCTORS, 2000, 34 (02) : 243 - 249
  • [5] 6H-SiC epilayers as nuclear particle detectors
    A. A. Lebedev
    N. S. Savkina
    A. M. Ivanov
    N. B. Strokan
    D. V. Davydov
    Semiconductors, 2000, 34 : 243 - 249
  • [6] Comparative investigation of structural, optical and electrical properties of 6H-SiC layers grown by CM and SSM epitaxial techniques
    Syrkin, AL
    Bluet, JM
    Dezauzier, C
    Bretagnon, T
    Contreras, S
    Robert, JL
    Bastide, G
    Camassel, J
    Anikin, MM
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 189 - 192
  • [7] Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates
    A. A. Lebedev
    V. V. Zelenin
    P. L. Abramov
    S. P. Lebedev
    A. N. Smirnov
    L. M. Sorokin
    M. P. Shcheglov
    R. Yakimova
    Technical Physics Letters, 2007, 33 : 524 - 526
  • [8] Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates
    Lebedev, A. A.
    Zelenin, V. V.
    Abramov, P. L.
    Lebedev, S. P.
    Smirnov, A. N.
    Sorokin, L. M.
    Shcheglov, M. P.
    Yakimova, R.
    TECHNICAL PHYSICS LETTERS, 2007, 33 (06) : 524 - 526
  • [9] Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates
    A. A. Lebedev
    P. L. Abramov
    E. V. Bogdanova
    S. P. Lebedev
    D. K. Nel’son
    B. S. Razbirin
    A. S. Tregubova
    Technical Physics Letters, 2010, 36 : 504 - 506
  • [10] Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates
    Lebedev, A. A.
    Abramov, P. L.
    Bogdanova, E. V.
    Lebedev, S. P.
    Nel'son, D. K.
    Razbirin, B. S.
    Tregubova, A. S.
    TECHNICAL PHYSICS LETTERS, 2010, 36 (06) : 504 - 506