FABRICATION OF P-N JUNCTION DIODES USING HOMOEPITAXIALLY GROWN 6H-SiC AT LOW TEMPERATURE BY CHEMICAL VAPOR DEPOSITION.

被引：0
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作者：
Shibahara, Kentaro [1 ]
Kuroda, Naotaka [1 ]
Nishino, Shigehiro [1 ]
Matsunami, Hiroyuki [1 ]
机构：
[1] Kyoto Univ, Kyoto, Jpn, Kyoto Univ, Kyoto, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 11期
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摘要：
16
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页码：1815 / 1817
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