FABRICATION OF P-N JUNCTION DIODES USING HOMOEPITAXIALLY GROWN 6H-SiC AT LOW TEMPERATURE BY CHEMICAL VAPOR DEPOSITION.

被引：0
|
作者：
Shibahara, Kentaro [1 ]
Kuroda, Naotaka [1 ]
Nishino, Shigehiro [1 ]
Matsunami, Hiroyuki [1 ]
机构：
[1] Kyoto Univ, Kyoto, Jpn, Kyoto Univ, Kyoto, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
16
引用
收藏
页码：1815 / 1817
相关论文
共 50 条
  • [31] Homoepitaxial chemical vapor deposition of 6H-SiC at low temperatures on {011¯4} substrates
    Yamashita, Atsushi
    Yoo, Woo Sik
    Kimoto, Tsunenobu
    Matsunami, Hiroyuki
    1600, (31):
  • [32] 4H-and 6H-SiC vertical static induction transistor with p-n junction as a gate
    Sankin, VI
    Shkrebiy, PP
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 579 - 582
  • [33] Nitrogen implanted high voltage, planar, 6H-SiC N+-P junction diodes
    Alok, D
    Baliga, BJ
    ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS, 1996, : 107 - 110
  • [34] Tunneling Current in 4H-SiC p-n Junction Diodes
    Kaneko, M.
    Chi, X.
    Kimoto, T.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3329 - 3334
  • [35] Study of the contact potential difference in p-n 6H-SiC structures grown by various techniques
    Russian Acad of Science, St. Petersburg, Russia
    Mater Sci Eng B Solid State Adv Technol, 1-3 (271-274):
  • [36] A study of the contact potential difference in p-n 6H-SiC structures grown by various techniques
    Lebedev, AA
    Davydov, DV
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 271 - 274
  • [37] A NEW DOPING METHOD USING METALORGANICS IN CHEMICAL VAPOR-DEPOSITION OF 6H-SIC
    YOSHIDA, S
    SAKUMA, E
    MISAWA, S
    GONDA, S
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 169 - 171
  • [38] Evolution of subgrain boundaries in heteroepitaxial GaN/AlN/6H-SiC grown by metalorganic chemical vapor deposition
    Liu, H
    Ali, GN
    Palle, KC
    Mikhov, MK
    Skromme, BJ
    Reitmeyer, ZJ
    Davis, RF
    GAN AND RELATED ALLOYS-2002, 2003, 743 : 381 - 386
  • [39] Heteroepitaxial ZnO/6H-SiC structures fabricated by chemical vapor deposition
    Ataev, B. M.
    Alivov, Ya. I.
    Kalinina, E. V.
    Mamedov, V. V.
    Onushkin, G. A.
    Makhmudov, S. Sh.
    Omaev, A. K.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E2471 - E2474
  • [40] High-quality ZnO layers grown on 6H-SiC substrates by metalorganic chemical vapor deposition
    Ashrafi, ABMA
    Zhang, BP
    Binh, NT
    Wakatsuki, K
    Segawa, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 1114 - 1117
12345