″INHIBITION EFFECT″ OF A TRICHLOROETHANE OXIDATION TO SUPPRESS THE STACKING-FAULT NUCLEATION IN SILICON.

被引：0

作者：

Claeys, C.L. ^{[1
]}

Declerck, G.J. ^{[1
]}

Van Overstraeten, R.J. ^{[1
]}

机构：

[1] K.U. Leuven, E.S.A.T. Laboratory, Kardinaal Mercierlaan 94, B-3030 Heverlee, Belgium

来源：

| 1600年 / 51期

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[41] INHOMOGENEOUS OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN CZOCHRALSKI SILICON
INOUE, N
OOSAKA, J
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 2051 - 2052
[42] STRUCTURE OF STACKING-FAULT PYRAMIDS IN SILICON-ON-INSULATOR MATERIAL
TWIGG, ME
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (05): : 2341 - 2347
[43] EXTRINSIC-INTRINSIC STACKING-FAULT PAIRS IN EPITAXIAL SILICON
WASHBURN, J
THOMAS, G
QUEISSER, HJ
APPLIED PHYSICS LETTERS, 1963, 3 (03) : 44 - 44
[44] DEPTH PROFILE OF BULK STACKING-FAULT RADIUS IN CZOCHRALSKI SILICON
WADA, K
INOUE, N
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1183 - 1186
[45] SUPPRESSION OF STACKING-FAULT GENERATION IN SILICON WAFER BY HCL ADDED TO DRY O2 OXIDATION
SHIRAKI, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) : 83 - 86
[46] INFLUENCE OF PRE-OXIDATION ANNEALING ON STACKING-FAULT GENERATION DUE TO MECHANICAL DAMAGE ON SILICON SURFACES
KAWADO, S
YANADA, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : 225 - 229
[47] NUCLEATION PROCESS OF STACKING-FAULT TETRAHEDRA IN GOLD STUDIED BY POSITRON LIFETIME SPECTROSCOPY
SHIRAI, Y
FURUKAWA, K
TAKAMURA, J
YAMADA, W
IWATA, S
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 37 (02): : 65 - 72
[48] THE CASCADE MECHANISM OF NUCLEATION OF VACANCY LOOPS AND STACKING-FAULT TETRAHEDRA IN FCC METALS
KAPINOS, VG
OSETSKII, YN
PLATONOV, PA
JOURNAL OF NUCLEAR MATERIALS, 1989, 165 (03) : 286 - 296
[49] EFFECT OF ALLOYING ON THE STACKING-FAULT ENERGY OF AUSTENITE IN STEELS
PETROV, YN
PHYSICS OF METALS, 1985, 6 (04): : 735 - 741
[50] EFFECT OF STACKING-FAULT ENERGY ON DEVELOPMENT OF EXTRUSIONS AND INTRUSIONS
DADRAS, P
GREENFIELD, IG
METALLOGRAPHY, 1978, 11 (02): : 223 - 229

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