″INHIBITION EFFECT″ OF A TRICHLOROETHANE OXIDATION TO SUPPRESS THE STACKING-FAULT NUCLEATION IN SILICON.

被引：0

作者：

Claeys, C.L. ^{[1
]}

Declerck, G.J. ^{[1
]}

Van Overstraeten, R.J. ^{[1
]}

机构：

[1] K.U. Leuven, E.S.A.T. Laboratory, Kardinaal Mercierlaan 94, B-3030 Heverlee, Belgium

来源：

| 1600年 / 51期

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引用

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[21] STACKING-FAULT DEFECTS IN EPITAXIAL SILICON LAYERS
BOOKER, GR
JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 441 - +
[22] PSEUDOPOTENTIAL CALCULATIONS OF STACKING-FAULT ENERGIES IN SILICON
KRAUSE, CW
PHILOSOPHICAL MAGAZINE, 1976, 33 (01): : 207 - 208
[23] DISLOCATIONS AND STACKING-FAULT ENERGY IN SILICON DITELLURIDE
GRIGORIADIS, P
STOEMENOS, J
JOURNAL OF MATERIALS SCIENCE, 1978, 13 (03) : 483 - 491
[24] PSEUDOPOTENTIAL CALCULATION OF STACKING-FAULT ENERGY IN SILICON
CHEN, LJ
FALICOV, LM
PHILOSOPHICAL MAGAZINE, 1974, 29 (01): : 1 - 8
[25] STACKING-FAULT INDUCED BY GOLD DIFFUSION IN SILICON
MOROOKA, M
TAKAHASHI, M
HASHIMOTO, F
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (08): : 2327 - 2332
[26] SOLUTIONS OF SIMULTANEOUS-EQUATIONS FOR OXIDATION ENHANCED AND RETARDED DIFFUSIONS AND OXIDATION STACKING-FAULT IN SILICON
YOSHIDA, M
MATSUMOTO, S
ISHIKAWA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (07): : 1031 - 1035
[27] EFFECT OF GROWTH RATE ON STACKING-FAULT DENSITY IN EPITAXIAL SILICON LAYERS
NOTIS, MR
CONARD, GP
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 695 - &
[28] BAUSCHINGER EFFECT AND STACKING-FAULT ENERGY
ABEL, A
MUIR, H
PHILOSOPHICAL MAGAZINE, 1973, 27 (03): : 585 - 594
[29] EFFECT OF STACKING-FAULT ENERGY ON ELECTROCRYSTALLIZATION
BEBCZUK DE CUSMINSKY, J
ANALES DE LA ASOCIACION QUIMICA ARGENTINA, 1977, 65 (01): : 17 - 21
[30] SUPPRESSION OF OXIDATION-INDUCED STACKING-FAULT FORMATION IN SILICON BY HIGH-PRESSURE STEAM OXIDATION
TSUBOUCHI, N
MIYOSHI, H
ABE, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 223 - 228

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